BD Transistor Datasheet pdf, BD Equivalent. Parameters and Characteristics. BD NPN Silicon Power Transistors. Designed for Complementary Use with the BD Series at 25°C Case Temperature 10 A Continuous Collector Current . VCER. Collector-Emitter Voltage (RBE = Ω). BD V. BDA. BDB. BDC. VEBO. Emitter-Base Voltage.
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This datasheet contains preliminary data, and supplementary data will be published at a later date. Machine model iiii mm iiiiii c iii v stresses exceeding those listed in the maximum.
Operating and storage junction temperature range tj, tstg 65 to c dattasheet characteristics characteristic symbol max.
The datasheet is printed for reference information only. Specifications may change in any manner without notice.
BD245 Datasheet, Equivalent, Cross Reference Search
Bd, bda, bdb, bdc bs245 silicon power transistors 2 june revised september specifications are subject to change without notice. Production processing does notnecessarily include testing of all parameters.
These parameters must be measured using voltagesensing contacts, separate from the current carrying contacts. July rev datsaheet 19 9 bda bdc npn power transistors features npn transistors applications audio, general purpose switching and amplifier transistors description the devices are manufactured in planar technology with base island layout.
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This datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. July rev 2 19 9 bda bdc npn power transistors features npn transistors applications audio, general purpose switching and amplifier transistors description the devices are manufactured in planar.
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Datasheet identification advance information product status formative or in design first production definition this datasheet contains the design specifications for product development.
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